Photovoltaic Detector Based on Type II Heterostructure with Deep AlSb/InAsSb/AlSb Quantum Well in the Active Region for the Mid-Infrared Spectral Range-Reference-Cited by-同舟云学术

Photovoltaic Detector Based on Type II Heterostructure with Deep AlSb/InAsSb/AlSb Quantum Well in the Active Region for the Mid-Infrared Spectral Range

Published:2013-08-28 Issue: Volume:461 Page:012026
ISSN:1742-6596
Container-title:Journal of Physics: Conference Series
language:
Short-container-title:J. Phys.: Conf. Ser.

Author:

Konovalov G G,Mikhailova M P,Andreev I A,Moiseev K D,Ivanov E V,Mikhailov M Yu,Yakovlev Yu P

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

http://stacks.iop.org/1742-6596/461/i=1/a=012026/pdf

Reference22 articles.

1. QWIP Detectors for the MWIR

2. Modulation-doping in 3–5 μm GaAs/AlAs/AlGaAs double barrier quantum well infrared photodetectors: an alternative to achieve high photovoltaic performance and high temperature detection

3. Low-frequency noise in AlSb∕InAs high-electron-mobility transistor structure as a function of temperature and illumination

4. InAs∕AlSb quantum cascade lasers emitting below 3μm

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and modeling of high-performance mid-wave infrared InAsSb-based nBn photodetector using barrier band engineering approaches;Frontiers of Optoelectronics;2023-04-06

2. Role of metallic contacts and defects on performances of an antimonide based thermo-photovoltaic cell: A numerical analysis;Solar Energy;2022-07

3. Study of structural and electronic properties of (ZnSeZB)m/(ZnSeWZ)n superlattices based on HSE hybrid functional;Modern Physics Letters B;2019-08-16

4. Room temperature operation of mid-infrared InAs081Sb019 based photovoltaic detectors with an In02Al08Sb barrier layer grown on GaAs substrates;Optics Express;2018-02-28

5. Uniaxial strain induced optical properties of complex type-II InGaAs/InAs/GaAsSb nano-scale heterostructure;Optik;2017-10