InAs‐AlSb heterostructure field‐effect transistors fabricated using argon implantation for device isolation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103400
Reference7 articles.
1. High transconductance InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors
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4. Electrical properties and band offsets of InAs/AlSbn‐Nisotype heterojunctions grown on GaAs
5. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
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