Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4962048
Reference26 articles.
1. Piezo‐Hall coefficients ofn‐type silicon
2. Modeling of piezo‐Hall effects inn‐doped silicon devices
3. Method for simultaneously reducing the misalignment offset and separating the Hall voltage from the off‐diagonal piezoresistive voltage in Hall effect and piezoresistive devices based on silicon
4. Package Stress Monitor to Compensate for the Piezo-Hall Effect in CMOS Hall Sensors
5. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A large pseudo-Hall effect in n-type 3C-SiC(1 0 0) and its dependence on crystallographic orientation for stress sensing applications;Materials Letters;2018-02
2. Fabrication of SiC MEMS Sensors;Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors;2018
3. Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration;Applied Physics Letters;2017-04-17
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