Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1427753
Reference12 articles.
1. Piezoelectricity in iii-v compounds with a phenomenological analysis of the piezoelectric effect
2. Field‐effect transistor structure based on strain‐induced polarization charges
3. Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistor
4. Piezoelectric InGaAs/AlGaAs laser with intracavity absorber
5. In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method
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1. Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration;Applied Physics Letters;2017-04-17
2. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation;Applied Physics Letters;2016-08-29
3. Modeling of carrier lifetimes in uniaxially strained GaAs;Journal of Applied Physics;2012-05-15
4. Experimental Study of $\langle \hbox{110}\rangle$ Uniaxial Stress Effects on p-Channel GaAs Quantum-Well FETs;IEEE Transactions on Electron Devices;2011-08
5. Erratum: “Impact of ⟨110⟩ uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors” [Appl. Phys. Lett. 95, 243504 (2009)];Applied Physics Letters;2010-07-12
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