Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration
Author:
Affiliation:
1. Queensland Micro- and Nanotechnology Centre, Griffith University, Queensland 4111, Australia
2. School of Engineering, Griffith University, Queensland 4222, Australia
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4980849
Reference20 articles.
1. 4H-SiC: a material for high temperature Hall sensor
2. Large Diameter, Low Defect Silicon Carbide Boule Growth
3. Studies on Pd/3C-SiC Schottky junction hydrogen sensors at high temperature
4. Mechanisms of growth and defect properties of epitaxial SiC
5. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction
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3. Photoresponse of a Highly-Rectifying 3C-SiC/Si Heterostructure Under UV and Visible Illuminations;IEEE Electron Device Letters;2018-08
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