Modeling of piezo‐Hall effects inn‐doped silicon devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109179
Reference7 articles.
1. Piezoresistance Effect in Germanium and Silicon
2. The Effects of Elastic Deformation on the Electrical Conductivity of Semiconductors
3. Piezo‐Hall coefficients ofn‐type silicon
4. A graphical representation of the piezoresistance coefficients in silicon
5. Carrier transport in semiconductor detectors of magnetic domains
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1. Piezo-Hall effect and fundamental piezo-Hall coefficients of single crystal n-type 3C-SiC(100) with low carrier concentration;Applied Physics Letters;2017-04-17
2. Fundamental piezo-Hall coefficients of single crystal p-type 3C-SiC for arbitrary crystallographic orientation;Applied Physics Letters;2016-08-29
3. Piezo-Hall effect in single crystal p-type 3C–SiC(100) thin film grown by low pressure chemical vapor deposition;RSC Advances;2016
4. Mechanical Effects on Carrier Transport;Computational Microelectronics;1999
5. Magnetic Field Effects on Carrier Transport;Computational Microelectronics;1999
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