Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation
Author:
Affiliation:
1. School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
2. Department of Information Science and Electronic Engineering, Zhejiang University, 38 Zheda Road, Hangzhou 310027, China
Funder
Grant-in-Aid for Scientific Research of Japan
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4941538
Reference19 articles.
1. Maintaining the benefits of CMOS scaling when scaling bogs down
2. Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs
3. Germanium channel MOSFETs: Opportunities and challenges
4. Ge based high performance nanoscale MOSFETs
5. High-κ gate dielectrics: Current status and materials properties considerations
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