Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks-Reference-Cited by-同舟云学术

Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks

Published:2019-04 Issue: Volume:675 Page:16-22
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mallem Kumar^ORCID,Jagadeesh Chandra S.V.,Ju Minkyu,Dutta Subhajit,Phanchanan Swagata,Sanyal Simpy,Pham Duy Phong,Hussain Shahzada Qamar,Kim Youngkuk,Park Jinjoo^ORCID,Cho Young-Hyun,Cho Eun-Chel,Yi Junsin^ORCID

Funder

National Research Foundation of Korea

Ministry of Science, ICT & Future Planning

Ministry of Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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4. Desorption kinetics of GeO from GeO2/Ge structure;Wang;J. Appl. Phys.,2010

5. Kinetic effects of O-vacancy generated by GeO2/Ge interfacial reaction;Wang;Jpn. J. Appl. Phys.,2011

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