Direct real-time observation of catastrophic optical degradation in operating semiconductor lasers using scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2775049
Reference10 articles.
1. Cross-sectional scanning tunneling microscopy of biased semiconductor lasers
2. Investigation on (Al0.7Ga0.3)0.5In0.5P∕(Al0.3Ga0.7)0.5In0.5P multi-quantum-barrier superlattice using cross-sectional scanning tunneling microscopy
3. Cross-sectional scanning tunneling microscopy and spectroscopy of strain in buried heterostructure lasers
4. Degradation of InGaAsP/InP-based multiquantum-well lasers
5. Nano-scale properties of defects in compound semiconductor surfaces
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3. Quantitative analysis of annealed scanning probe tips using energy dispersive x-ray spectroscopy;Applied Physics Letters;2013-01-14
4. Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers;Laser & Photonics Reviews;2011-03-07
5. Surface defects in semiconductor lasers studied with cross-sectional scanning tunneling microscopy;Applied Surface Science;2010-07
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