Degradation of InGaAsP/InP-based multiquantum-well lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.371067
Reference12 articles.
1. Defect Mechanisms in Degradation of Long Wavelength (1.30–1.55 Micron) Laser Diodes
2. The effect of interstital Frank partial dislocations on the gradual degradation of 1.3‐μm double‐channel planar buried heterostructure laser diodes
3. Studies of the Microstructure in Degraded Buried Heterostructure GaInAsP/InP Laser Diodes and Its Relation with the Lasing Threshold Current
4. Sample Preparation of InGaAsP/InP‐Based Lasers for Plan‐View Transmission Electron Microscopy Using Selective Chemical Thinning
5. Recombination-Enhanced Reactions in Semiconductors
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1. Optical output power-dependent degradation mechanism of 445 nm InGaN blue laser;physica status solidi (a);2009-07
2. Direct real-time observation of catastrophic optical degradation in operating semiconductor lasers using scanning tunneling microscopy;Applied Physics Letters;2007-08-20
3. Stress on Junction-Down-Mounted Ridge-Waveguide Laser Diodes;Japanese Journal of Applied Physics;2005-04-08
4. Bonding stress and reliability of high power GaAs-based lasers;IEEE Transactions on Components and Packaging Technologies;2001-03
5. Role of nonradiative recombination in the degradation of InGaAsP/InP-based bulk lasers;IEEE Journal of Quantum Electronics;2000-11
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