Investigation on (Al0.7Ga0.3)0.5In0.5P∕(Al0.3Ga0.7)0.5In0.5P multi-quantum-barrier superlattice using cross-sectional scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2005375
Reference26 articles.
1. Electron reflectance of multiquantum barrier (MQB)
2. The control and modification of semiconductor interfaces using thin multi-quantum barrier/well (MQB/W) reflectors
3. An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers
4. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy
5. Atomic‐scale view of AlGaAs/GaAs heterostructures with cross‐sectional scanning tunneling microscopy
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1. Direct real-time observation of catastrophic optical degradation in operating semiconductor lasers using scanning tunneling microscopy;Applied Physics Letters;2007-08-20
2. Cross-sectional scanning tunneling microscopy of biased semiconductor lasers;Journal of Applied Physics;2007-07-15
3. Modeling multiple quantum barrier effects and reduced electron leakage in red-emitting laser diodes;Journal of Applied Physics;2006-10-15
4. Electrical barriers at semiconductor interfaces: Some reflections and future challenges;Journal de Physique IV (Proceedings);2006-03
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