The control and modification of semiconductor interfaces using thin multi-quantum barrier/well (MQB/W) reflectors
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference17 articles.
1. Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces
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3. A simple approach to heterojunctions
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1. Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques;Applied Surface Science;2008-11
2. Investigation on (Al0.7Ga0.3)0.5In0.5P∕(Al0.3Ga0.7)0.5In0.5P multi-quantum-barrier superlattice using cross-sectional scanning tunneling microscopy;Journal of Applied Physics;2005-08
3. Impurity-induced disordering in AlGaInP superlattices studied using cross-sectional scanning tunneling microscopy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
4. An investigation of multi-quantum barriers for band offset engineering in AlGaInP/GaInP lasers;Applied Surface Science;2002-05
5. Engineering and investigating the control of semiconductor surfaces and interfaces;Journal of Physics D: Applied Physics;2002-04-18
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