Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques-Reference-Cited by-同舟云学术

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Characterisation of the influence of multi-quantum barrier reflectors within GaInP/AlGaInP quantum well lasers using near-field imaging techniques

Published:2008-11 Issue:3 Volume:255 Page:649-652
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Ackland M.P.,Dunstan P.R.,Brown M.R.,Teng K.S.,S.P.Wilks ,Cobley R.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference21 articles.

1. Short-wavelength InGaAlP visible laser diodes

2. Electron reflectance of multiquantum barrier (MQB)

3. Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers

4. Modified multiquantum barrier for 600 nm range AlGaInP lasers

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material and device characterization of InGaP solar cells grown on GaAs misoriented substrates by metal-organic chemical vapor deposition;Solar Energy;2021-05

2. High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers;Advances in Condensed Matter Physics;2012

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