Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105099
Reference12 articles.
1. AlGaInP double heterostructure visible-light laser diodes with a GaInP active layer grown by metalorganic vapor phase epitaxy
2. Highly reliable InGaP/InGaAlP visible light emitting inner stripe lasers with 667 nm lasing wavelength
3. Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy
4. 636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodes
5. 632.7 nm CW Operation (20°C) of AlGaInP Visible Laser Diodes Fabricated on (001) 6° off toward [110] GaAs Substrate
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