Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs∕Ge∕SixGe1−x∕Si substrate
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2337770
Reference13 articles.
1. Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region
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3. Low-temperature growth of GaAs on Si used for ultrafast photoconductive switches
4. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
5. Growth of High-Quality Ge Epitaxial Layers on Si (100)
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1. Tuning performance: strain modulation of GaAs layers grown on meso-porous silicon substrates;Journal of Materials Science: Materials in Electronics;2024-06
2. Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature;Journal of Applied Physics;2015-06-07
3. Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band;Applied Physics Letters;2010-01-25
4. AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers;Japanese Journal of Applied Physics;2008-09-12
5. Growth of InAs∕Sb:GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3μm band;Applied Physics Letters;2008-06-30
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