Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Multidimensional quantum well laser and temperature dependence of its threshold current
2. Gain and the threshold of three-dimensional quantum-box lasers
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5. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
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