Evidence that arsenic is incorporated as As4 molecules in the molecular beam epitaxial growth of Hg1−xCdxTe:As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123718
Reference14 articles.
1. Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers
2. Optically pumped LPE-grown Hg1−xCdxTe lasers
3. Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation
4. Mode of arsenic incorporation in HgCdTe grown by MBE
5. Arsenic incorporation in HgCdTe grown by molecular beam epitaxy
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