CdTe/Si Composite Substrate and HgCdTe Epitaxy
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Publisher
Springer Berlin Heidelberg
Link
http://link.springer.com/content/pdf/10.1007/978-3-662-52718-4_3
Reference209 articles.
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3. Niraula M, Yasuda K, Ohnishi H, Takahashi H, Eguchi K, Noda K, Agata Y. Direct growth of high-quality thick CdTe epilayers on Si(211) substrates by metalorganic vapor phase epitaxy for nuclear radiation detection and imaging. J Electron Mater. 2006;35(6):1257–61.
4. Wang YZ, Chen L, Wu Y, et al. Heteroepitaxy of CdTe on tilting Si(211) substrates by molecular beam epitaxy. J Cryst Growth. 2006;290(2):436–40.
5. Million A, Dhar NK, Dinan JH. Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy. J Cryst Growth. 1996;159(1–4):76–80.
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