New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBE-Reference-Cited by-同舟云学术

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New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBE

Published:1991-05 Issue:1-4 Volume:111 Page:698-710
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Faurie J.P.,Sporken R.,Sivananthan S.,Lange M.D.

Funder

Air Force Office of Scientific Research

Army Research Office

Defense Advanced Research Projects Agency

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference42 articles.

1. A new infrared detector using electron emission from multiple quantum wells

2. Performance limitations of GaAs/AlGaAs infrared superlattices

3. Comment on ‘‘Performance limitations of GaAs/AlGaAs infrared superlattices’’ [Appl. Phys. Lett.54, 2704 (1989)]

4. Response to ‘‘Comment on ‘Performance limitations of GaAs/AlGaAs infrared superlattices’ ’’ [Appl. Phys. Lett.56, 2354 (1990)]

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3. Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy;Journal of Electronic Materials;2017-03-21

4. CdTe/Si Composite Substrate and HgCdTe Epitaxy;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

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