Model of V Hg Incorporation in Arsenic-Doped HgCdTe: First-Principles Calculations-Reference-Cited by-同舟云学术

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Model of V Hg Incorporation in Arsenic-Doped HgCdTe: First-Principles Calculations

Published:2013-03-12 Issue:6 Volume:42 Page:1010-1016
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Duan H.,Dong Y. Z.,Huang Y.,Chen X. S.,Lu W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-013-2495-1.pdf

Reference36 articles.

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2. Y.S. Ryu, Y.B. Heo, B.S. Song, S.J. Yoon, Y.J. Kim, and T.W. Kang, Appl. Phys. Lett. 83, 3776 (2003).

3. D. Shaw and P. Capper, J. Mater. Sci.: Mater. Electron. 19, 67 (2008).

4. Y. Selamet, C.H. Grein, T.S. Lee, and S. Sivananthan, J. Vac. Sci. Technol. B 19, 1488 (2001).

5. P. Boieriu, C.H. Grein, H.S. Jung, J. Garland, and V. Nathan, Appl. Phys. Lett. 86, 212106 (2005).

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1. Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic;Journal of Applied Physics;2014-04-28

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