Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation-Reference-Cited by-同舟云学术

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Electrical properties of intrinsic p‐type shallow levels in HgCdTe grown by molecular‐beam epitaxy in the (111)B orientation

Published:1989-03 Issue:2 Volume:7 Page:311-313
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Boukerche M.,Sivananthan S.,Wijewarnasuriya P. S.,Sou I. K.,Faurie J. P.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.576118

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. CdTe/Si Composite Substrate and HgCdTe Epitaxy;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016

2. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors;Applied Physics Reviews;2015-12

3. Molecular Beam Epitaxy of HgCdTe Materials and Detectors;Comprehensive Semiconductor Science and Technology;2011

4. MBE Growth of Mercury Cadmium Telluride;Mercury Cadmium Telluride;2010-09-04

5. Molecular-Beam Epitaxial Growth of HgCdTe;Springer Handbook of Crystal Growth;2010

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