Investigation of near interface properties in semi‐insulating InP substrates with epitaxial grown InGaAs and InAlAs by photoreflectance
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353268
Reference22 articles.
1. Very high speed GaInAs metal‐semiconductor‐metal photodiode incorporating an AlInAs/GaInAs graded superlattice
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3. Influence of nonuniform charge distribution in In0.53Ga0.47As on the interpretation of dopant incorporation
4. Origin ofn‐type conduction at the interface between epitaxial‐grown layer and InP substrate and its suppression by heating in phosphine atmosphere
5. Defects in epitaxial multilayers
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