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Development of InAlAsSb growth by MOVPE

  • Published:2017-08 Issue: Volume:471 Page:15-20
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Slocum Michael,Forbes David V.,Hillier Glen C.,Smith Brittany L.,Adams Jessica G.J.,Hubbard Seth M.

Funder

U.S. Department of Energy Advanced Research Projects Agency-Energy

National Aeronautics and Space Administration-Space Technology Research Fellowship

Intelligence Community Postdoctoral Research Fellowship Program at Rochester Institute of Technology

U.S. Department of Energy

Office of the Director of National Intelligence

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. High conduction-band offset of AlInAsSb/InGaAs multiple quantum wells grown by metalorganic vapor phase epitaxy;Chang;Appl. Phys. Lett.,1999

2. GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy;Wang;Appl. Phys. Lett.,1997

3. Towards high efficiency multi-junction solar cells grown on InP substrates;Gonzalez,2013

4. Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb;Walters,2011

5. Optical characterization of In0.27Ga0.73Sb and InxAl1GxAsySb1Gy epitaxial layers for development of 6.2–based heterojunction bipolar transistors;Glaser;J. Vac. Sci. Technol. B,2006
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