Enhancing the quantum efficiency of InGaN yellow-green light-emitting diodes by growth interruption
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4892830
Reference28 articles.
1. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
2. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
3. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
4. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2
5. Influence of strain relaxation on structural and optical characteristics of InGaN/GaN multiple quantum wells with high indium composition
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