Ground and excited state transitions in as-grown Ga0.64In0.36N0.046As0.954 quantum wells studied by contactless electroreflectance
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2432230
Reference22 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
3. Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
4. GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
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