GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1563062
Reference12 articles.
1. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 [micro sign]m
2. 1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions
3. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
4. Electrically pumped 10 Gbit∕s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
5. GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
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1. Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance;Journal of Applied Physics;2009-08
2. Electronic transport in n- and p-type modulation doped GaxIn1−xNyAs1−y/GaAs quantum wells;Journal of Physics: Condensed Matter;2009-04-01
3. GaAs-based III–Ny–V1−yactive regions based on short-period super-lattice structures;Semiconductor Science and Technology;2008-10-24
4. Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing;Journal of Applied Physics;2008-09
5. Optical properties of GaInNAsSb/GaAs/GaAs1−xNx (x≈10%) saturable absorber quantum wells;Applied Surface Science;2008-09
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