Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1314295
Reference16 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers
3. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
4. 1.3 [micro sign]m continuous-wave operation of GainNAs lasers grown by metal organic chemical vapour deposition
5. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
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1. The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1−xIn x N y As1−y/GaAs quantum well;Nanoscale Research Letters;2012-10-24
2. Effects of an intense, high-frequency laser field on the binding energy of excitons confined in a GaInNAs/GaAs quantum well;Physica B: Condensed Matter;2012-02
3. The effect of nitrogen on the diamagnetic susceptibility of a donor in quantum well under the magnetic field;Superlattices and Microstructures;2010-09
4. Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance;Journal of Applied Physics;2009-08
5. Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications;PHYS STATUS SOLIDI B;2007
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