Defect‐ and phonon‐assisted tunneling in LPE In1−xGaxP1−zAszDH laser diodes (λ∼1 μm)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323416
Reference25 articles.
1. Liquid phase epitaxial In1−x Gax P1−z Asz/GaAs1−y Py quaternary (LPE)‐ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K)
2. Yellow In1−xGaxP1−zAszdouble‐heterojunction lasers
3. Pulsed room‐temperature operation of In1−xGaxP1−zAszdouble heterojunction lasers at high energy (6470 Å, 1.916 eV)
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1. Investigation of injection mechanisms for InGaAs/InP double heterostructure bipolar transistors;Solid-State Electronics;1989-10
2. Analysis of current leakage in InGaAsP/InP buried heterostructure lasers;IEEE Journal of Quantum Electronics;1989-06
3. Analytical model for leakage current in InGaAsP avalanche photodiodes;Solid-State Electronics;1988-09
4. Photoluminescence measurements of band discontinuity in InP‐InGaPAs heterostructures;Applied Physics Letters;1985-04-15
5. Heterojunction phototransistors for long‐wavelength optical receivers;Journal of Applied Physics;1982-02
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