Photoluminescence measurements of band discontinuity in InP‐InGaPAs heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95497
Reference12 articles.
1. Relationship between the conduction‐band discontinuities and band‐gap differences of InGaAsP/InP heterojunctions
2. Determination of the valence‐band discontinuity of InP1−xGaxP1−zAsz(x∼0.13,z∼0.29) by quantum‐well luminescence
3. Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE)
4. Photopumped laser operation of MO‐CVD AlxGa1−xAs near a GaAs quantum well (λ≳6200 Å, 77 °K)
5. High-uniformity liquid phase epitaxial InGaAsP (λ = 1.3 μm)
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1. Effect of Quantum Well Width Reduction for GaInNAs/GaAs Lasers;Optical Review;2002-11
2. Determining energy‐band offsets in quantum wells using only spectroscopic data;Journal of Applied Physics;1993-06-15
3. Comparison between theory and experiment for InGaAs/InP self‐electro‐optic effect devices;Applied Physics Letters;1992-10-19
4. Band Offsets in Semiconductor Heterojunctions;Solid State Physics;1992
5. Band offset in InP/Ga0.47In0.53As heterostructures;Applied Physics Letters;1991-03-11
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