TiNx/HfO2 interface dipole induced by oxygen scavenging
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3570647
Reference19 articles.
1. Barrier energies in metal-silicon dioxide-silicon structures
2. Band alignments in metal–oxide–silicon structures with atomic-layer deposited Al2O3 and ZrO2
3. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
4. Schottky barriers and semiconductor band structures
5. Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities
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