Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks-Reference-Cited by-同舟云学术

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Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

Published:2021-12-13 Issue:24 Volume:119 Page:243502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wohlfahrt Markus¹^ORCID,Uren Michael J.¹^ORCID,Yin Yidi²,Lee Kean Boon²^ORCID,Kuball Martin¹^ORCID

Affiliation:

1. Centre for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom

2. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom

Funder

Research Councils UK Centre for Energy Epidemiology

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0066346

Reference33 articles.

1. The 2018 GaN power electronics roadmap

2. A review of GaN HEMT broadband power amplifiers

3. Reliability and parasitic issues in GaN-based power HEMTs: a review

4. GaN HEMT reliability

5. Trapping phenomena and degradation mechanisms in GaN-based power HEMTs

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1. Limiting role of dislocations in high-current AlGaN/GaN hot electron transistors;Applied Physics Letters;2024-02-05

2. Scanning capacitance microscopy of GaN-based high electron mobility transistor structures: A practical guide;Ultramicroscopy;2023-12

3. The isolation feature geometry dependence of reverse gate-leakage current of AlGaN/GaN HFETs;Physica Scripta;2023-08-09

4. III-nitride vertical hot electron transistor with polarization doping and collimated injection;Applied Physics Letters;2022-11-28

5. Excess noise in high-current diamond diodes;Applied Physics Letters;2022-02-07

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