Mobility improvement in nanowire junctionless transistors by uniaxial strain-Reference-Cited by-同舟云学术

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Mobility improvement in nanowire junctionless transistors by uniaxial strain

Published:2010-07-26 Issue:4 Volume:97 Page:042114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Raskin Jean-Pierre,Colinge Jean-Pierre,Ferain Isabelle,Kranti Abhinav,Lee Chi-Woo,Akhavan Nima Dehdashti,Yan Ran,Razavi Pedram,Yu Ran

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3474608

Reference9 articles.

1. A Logic Nanotechnology Featuring Strained-Silicon

2. Uniaxial, tensile-strained Si devices

3. Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

4. Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack

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1. Analysis of 10 nm Strained Channel Double Gate Ultra-Thin Body Junctionless MOSFET;Journal of Electronics and Informatics;2024-09

2. Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress;IEEE Transactions on Electron Devices;2024-07

3. Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs;Nanotechnology;2024-05-30

4. A pathway to improve short channel effects of junctionless based FET’s after incorporating technology boosters: a review;Engineering Research Express;2024-02-26

5. Electrical transfer, carrier concentration and surface charge analysis of a single-gated cylindrical channel junctionless p-type nanowire field-effect transistor for sensor applications;Comptes Rendus. Chimie;2021-05-06

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