Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS-Reference-Cited by-同舟云学术

Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

Published:2004-03 Issue:1-4 Volume:224 Page:241-247
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Takagi Shin-ichi,Mizuno Tomohisa,Tezuka Tsutomu,Sugiyama Naoharu,Numata Toshinori,Usuda Koji,Moriyama Yoshihiko,Nakaharai Shu,Koga Junji,Tanabe Akihito,Maeda Tatsuro

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference30 articles.

1. J.J. Welser, J.L. Hoyt, J.F. Gibbons, IEDM Tech. Dig. 1000 (1992).

2. M. Rashed, W.K. Shih, S. Jallepalli, T.J.T. Kwan, C.M. Maziar, IEDM Tech. Dig. 765 (1995).

3. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

4. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s

5. J.J. Welser, J.L. Hoyt, S. Takagi, J.F. Gibbons, IEDM Tech. Dig. 373 (1994).

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nested micro-ring refractive index sensor based on a subwavelength grating waveguide and the Vernier effect;Applied Optics;2023-08-04

2. Top-down method to introduce ultra-high elastic strain;Journal of Materials Research;2017-02-14

3. Boosting ON-Current in Tunnel Field-Effect Transistor;Fundamentals of Tunnel Field-Effect Transistors;2016-10-04

4. Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on Silicon–Germanium-on-Insulator (SGOI) MOSFETs;Superlattices and Microstructures;2013-06

5. Anisotropy of the silicon valence band induced by strain with various orientations;Journal of Applied Physics;2013-05-14