Anisotropy of the silicon valence band induced by strain with various orientations
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4804412
Reference33 articles.
1. High‐mobilityp‐channel metal‐oxide‐semiconductor field‐effect transistor on strained Si
2. Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design
3. Local mechanical-stress control (LMC): a new technique for CMOS-performance enhancement
4. Low temperature (800°C) recessed junction selective silicon-germanium source/drain technology for sub-70 nm CMOS
5. A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 μm/sup 2/ SRAM cell
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1. Theory of Burstein-Moss effect in semiconductors with anisotropic energy bands;Physica Scripta;2024-02-22
2. Anomalous threshold reduction from <100> uniaxial strain for a low-threshold Ge laser;Optics Communications;2016-11
3. Electronic band structure modulated by local surface strain in the (111) facet of the 〈112〉 silicon nanowires;Solid State Communications;2015-04
4. Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles;Journal of Applied Physics;2014-02-14
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