Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress-Reference-Cited by-同舟云学术

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Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress

Published:2024-07 Issue:7 Volume:71 Page:4420-4423
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Nitish¹^ORCID,Gupta Ankur¹^ORCID,Singh Pushpapraj¹^ORCID

Affiliation:

1. Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi, India

Funder

Defense Research and Development Organization (DRDO), Government of India

Science and Engineering Research Board (SERB), India

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10566499/10546966.pdf?arnumber=10546966

Reference37 articles.

1. Nanowire transistors without junctions

2. Gate-All-Around Junctionless Nanowire MOSFET With Improved Low-Frequency Noise Behavior

3. Electro-Thermal Characteristics of Junctionless Nanowire Gate-All-Around Transistors Using Compact Thermal Conductivity Model

4. 3D chip package interaction thermo-mechanical challenges: Proximity effects of Through Silicon vias and μ-bumps

5. Evaluation of Mechanical Stress Induced During IC Packaging

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