Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope-Reference-Cited by-同舟云学术

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Direct hysteresis measurements of single nanosized ferroelectric capacitors contacted with an atomic force microscope

Published:2001-11-26 Issue:22 Volume:79 Page:3678-3680
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tiedke S.,Schmitz T.,Prume K.,Roelofs A.,Schneller T.,Kall U.,Waser R.,Ganpule C. S.,Nagarajan V.,Stanishevsky A.,Ramesh R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1421638

Reference12 articles.

1. Characteristics of 0.25 µm Ferroelectric Nonvolatile Memory with a Pb(Zr, Ti)O3Capacitor on a Metal/Via-Stacked Plug

2. Differentiating 180° and 90° switching of ferroelectric domains with three-dimensional piezoresponse force microscopy

3. Modification and detection of domains on ferroelectric PZT films by scanning force microscopy

4. Characteristics of PZT thin films as ultra-high density recording media

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