Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules-Reference-Cited by-同舟云学术

Effect of surface passivation process for AlGaN/GaN HEMT heterostructures using phenol functionalized-porphyrin based organic molecules

Published:2018-11-21 Issue:19 Volume:124 Page:195702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Garg Manjari¹^ORCID,Naik Tejas Rajendra²,Pathak Ravi¹,Rao Valipe Ramgopal³,Liao Che-Hao⁴,Li Kuang-Hui⁴,Sun Haiding⁴^ORCID,Li Xiaohang⁴^ORCID,Singh Rajendra¹

Affiliation:

1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

2. Centre of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai, Maharashtra 400076, India

3. Department of Electrical Engineering, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India

4. Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funder

Council of Scientific and Industrial Research

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049873

Reference65 articles.

1. The early history of the high electron mobility transistor (HEMT)

2. AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications

3. The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs

4. Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery Experiments

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