Spectroscopic ellipsometry and transmission electron microscopy study of annealed high‐dose oxygen implanted silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343295
Reference8 articles.
1. Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces
2. Formation and nondestructive characterization of ion implanted silicon‐on‐insulator layers
3. Characterization of the silicon‐on‐insulator material formed by high‐dose oxygen implantation using spectroscopic ellipsometry
4. Ellipsometric spectra of silicon‐on‐insulator wafers
5. Depth profiles of the optical properties of buried oxides (SIMOX) by ellipsometry
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1. Characterization of damage structure in ion implanted SiC using high photon energy synchrotron ellipsometry;Thin Solid Films;2011-02
2. Ellipsometric analysis of ion-implanted polycrystalline silicon films before and after annealing;Thin Solid Films;2006-02
3. Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers;Japanese Journal of Applied Physics;2001-09-15
4. Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH[sub 4] Reduction of WF[sub 6];Journal of The Electrochemical Society;2001
5. Formation of Conducting and Insulating Layered Structures in Si by Ion Implantation: Process Control Using FTIR Spectroscopy;Journal of The Electrochemical Society;2001
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