Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH[sub 4] Reduction of WF[sub 6]-Reference-Cited by-同舟云学术

Si Consumption in Selective Chemical Vapor Deposition of Tungsten Using SiH[sub 4] Reduction of WF[sub 6]

Published:2001 Issue:4 Volume:148 Page:G229
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Takahashi Mitsutoshi,Takayama Kazuhiko

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. M. Takahashi, T. Ohno, Y. Sakakibara, and K. Takayama,IEEE Trans. Electron Devices, Submitted.

2. Deep-submicrometer channel design in silicon-on-insulator (SOI) MOSFET's

3. K. Imai, H. Ohnishi, K. Yamaguchi, K. Inoue, Y. Matsubara, A. Ono, and T. Horiuchi,Symp. VLSI Tech., p. 33 (1997).

4. Raised source/drain MOSFET with dual sidewall spacers

5. 0.18-μm fully-depleted silicon-on-insulator MOSFET's

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices;ECS Journal of Solid State Science and Technology;2019

2. Structural, magnetic and electrochemical properties of lithium iron orthosilicate;Journal of Power Sources;2006-10

3. Magnetic studies of the carbothermal effect on LiFePO4;physica status solidi (a);2006-01

4. Crystal and Band Structures, Bonding, and Optical Properties of Solid Compounds of Alkaline Indium (III) Pyrophosphates MInP2O7 (M = Na, K, Rb, Cs);Chemistry of Materials;2004-09-22

5. Short-Channel Poly-Si Thin-Film Transistors with Ultrathin Channel and Self-Aligned Tungsten-Clad Source/Drain;Electrochemical and Solid-State Letters;2004