Ellipsometric spectra of silicon‐on‐insulator wafers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99207
Reference7 articles.
1. High Speed C-MOS IC Using Buried SiO2Layers Formed by Ion Implantation
2. Synthesis of silicon dioxide by ion implantation
3. A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation
4. ELLIPSOMETRIC SPECTRA OF SiO2 FILMS ON SILICON
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1. Spectroscopic ellipsometry study of SiC/Si heterostructures formed by high-dose C+ implantation into silicon;Solid State Communications;2000-09
2. Investigation of multilayer SOI structures by electroreflectance spectroscopy;Materials Letters;1993-12
3. Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy;Materials Science and Engineering: B;1992-01
4. Characterization of annealed high‐dose oxygen‐implanted silicon by spectroscopic ellipsometry and reflectometry;Journal of Applied Physics;1991-12
5. Spectroscopic ellipsometry studies of SIMOX structures and correlation with cross-section TEM;Vacuum;1991
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