Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy-Reference-Cited by-同舟云学术

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Comparative study of the effect of annealing of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry, cross-sectional transmission electron microscopy and Rutherford backscattering spectroscopy

Published:1992-01 Issue:1-2 Volume:12 Page:177-184
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Lohner T.,Skorupa W.,Fried M.,Vedam K.,Nguyen N.,Grötzschel R.,Bartsch H.,Gyulai J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference18 articles.

1. High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

2. Microstructural characterization of nitrogen‐implanted silicon‐on‐insulator

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1. In situ spectroscopic ellipsometry in vertical furnace: monitoring and control of high-temperature processes;Vacuum;2001-05

2. ELLIPSOMETRIC CHARACTERIZATION OF THIN FILMS;Handbook of Surfaces and Interfaces of Materials;2001

3. Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition;Journal of Applied Physics;2000-02-15

4. Spectroscopic ellipsometry: a historical overview;Thin Solid Films;1998-02

5. The effect of adhesion promoter layer thickness on the adhesion strength between silicone rubber and aluminium;Composite Interfaces;1997-01

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