Properties of two-dimensional electron gas containing self-organized quantum antidots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125195
Reference11 articles.
1. Transport properties of two‐dimensional electron gas in AlGaAs/GaAs selectively doped heterojunctions with embedded InAs quantum dots
2. Trapping of photogenerated carriers by InAs quantum dots and persistent photoconductivity in novel GaAs/n-AlGaAs field-effect transistor structures
3. Electron transport properties through InAs self-assembled quantum dots in modulation doped structures
4. InAs self-assembled quantum dots as controllable scattering centers near a two-dimensional electron gas
5. Collapse of spin splitting in the quantum Hall effect
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1. Two-dimensional plasmon excitations in a random array of quantum antidots;ST PETER POLY U J-PH;2023
2. In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices;Journal of Applied Physics;2011-08-15
3. Cyclotron resonance of two-dimensional electron system affected by neighboring quantum dot layer;Applied Physics Letters;2010-05-10
4. Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate;Physica E: Low-dimensional Systems and Nanostructures;2005-01
5. Lateral alignment of SiC dots on Si;physica status solidi (c);2004-01-19
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