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Lateral alignment of SiC dots on Si

  • Published:2004-01-19 Issue:2 Volume:1 Page:337-340
  • ISSN:1610-1634
  • Container-title:physica status solidi (c)
  • language:en
  • Short-container-title:phys. stat. sol. (c)

Author:

Cimalla V.1,Pezoldt J.1,Stauden Th.1,Schmidt A.A.2,Zekentes K.3,Ambacher O.1

Affiliation:

1. Center for Micro‐ and Nanotechnologies, Technical University Ilmenau, 98693 Ilmenau, Germany

2. A.F. Ioffe Physico‐Technical Institute of RAS, 26 Polytechnicheskaya Str., 19402 St. Petersburg, Russia

3. Foundation for Research and Technology‐Hellas, P.O. Box 1527, Heraklion, Crete, 71110, Greece

Publisher

Wiley

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si;Journal of Computational and Theoretical Nanoscience;2012-11-01

2. Fused silica ‘glass grass’: fabrication and utilization;Journal of Micromechanics and Microengineering;2010-01-08

3. Dots Formation by CVD in the SiC-Si Hetero-System;Materials Science Forum;2008-09

4. Carbon surface diffusion and SiC nanocluster self-ordering;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-12

5. Terrace width dependence of cobalt silicide nucleation on Si(111)-(7×7);Applied Physics Letters;2006-01-09
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