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Far-infrared excitations in antidot systems on silicon MOS structures

  • Published:1995-03-01 Issue:3 Volume:10 Page:365-368
  • ISSN:0268-1242
  • Container-title:Semiconductor Science and Technology
  • language:
  • Short-container-title:Semicond. Sci. Technol.

Author:

Huber A,Jejina I,Lorenz H,Kotthaus J P,Bakker S,Klapwijk T M

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lateral alignment of SiC dots on Si;physica status solidi (c);2004-01-19

2. Linear alignment of SiC dots on silicon substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004

3. Classical and Quantum Transport in Antidot Arrays;Electron Transport in Quantum Dots;2003

4. Theory of electromagnetic response and collective excitations of a square lattice of antidots;Physical Review B;1996-11-15

5. Theory of electromagnetic response and collective excitations in antidots;Physical Review B;1995-12-15
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