Formation of Y2O3 interface layer in a YMnO3/Si ferroelectric gate structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1332101
Reference10 articles.
1. Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure
2. Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistor
3. Ferroelectric characterization of highly (0001)-oriented YMnO3 thin films grown by chemical solution deposition
4. Memory window of highly c-axis oriented ferroelectric YMnO3 thin films
5. On the crystal structure of the manganese(III) trioxides of the heavy lanthanides and yttrium
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