Characteristics of Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistors Using a Pt/SrBi2Ta2O9/Y2O3/Si Structure
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 45 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication and Characterization of ZnO:Al/Sr0.8Bi2.2Ta2O9/Y2O3:Eu Structures for Ferroelectric-Electroluminescent Devices;Japanese Journal of Applied Physics;2009-09-24
2. Improvement on Reliability Properties of Metal-Ferroelectric (BiFeO[sub 3])-Insulator (HfO[sub 2])-Semiconductor Structures Fabricated by Oxygen-Incorporated Magnetron Sputtering;Journal of The Electrochemical Society;2008
3. Effect of annealing temperature on the structural and electrical properties of SrBi2Ta2O9 thin films for memory-based applications;Physica B: Condensed Matter;2007-11
4. The Effects of Oxygen Partial Pressure on Interface States and Ferroelectric Properties of PZT/PbO/Si (MFIS) Structures;Materials Science Forum;2007-05
5. Interface Mn nanoclusters in YMnO3/Si ferroelectric gate structures revealed by electron magnetic resonance;Current Applied Physics;2007-01
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