Silicon‐induced local interface dipole in Al/GaAs(001) Schottky diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110927
Reference13 articles.
1. Metal contacts to GaAs with 1 eV Schottky barrier height
2. Barrier height variation in Al/GaAs Schottky diodes with a thin silicon interfacial layer
3. Control of GaAs Schottky Barrier Height by Ultrathin Molecular beam epitaxy si interface control layer
4. Structure and local dipole of Si interface layers in AlAs-GaAs heterostructures
5. Photovoltaic effects in photoemission studies of Schottky barrier formation
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