Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1873037
Reference44 articles.
1. Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements
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3. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
4. In situ fabricated Ga2O3–GaAs structures with low interface recombination velocity
5. Thermodynamic and photochemical stability of low interface state density Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
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