Control of GaAs Schottky Barrier Height by Ultrathin Molecular beam epitaxy si interface control layer-Reference-Cited by-同舟云学术

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Control of GaAs Schottky Barrier Height by Ultrathin Molecular beam epitaxy si interface control layer

Published:1993-01-30 Issue:Part 1, No. 1B Volume:32 Page:502-510
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

koyanagi ken-ichi,Kasai Seiya,Hasegawa Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces;Nature Communications;2015-04-07

2. The physics and chemistry of the Schottky barrier height;Applied Physics Reviews;2014-03

3. Opportunities for mesoscopics in thermometry and refrigeration: Physics and applications;Reviews of Modern Physics;2006-03-17

4. Studies of Effects of Adsorption of Silicon or Germanium on the Electronic States of (100) GaAs Surfaces;Japanese Journal of Applied Physics;2005-01-11

5. Schottky barrier heights at polar metal/semiconductor interfaces;Physical Review B;2003-08-22

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