Subband and transport calculations in double n-type δ-doped quantum wells in Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2168024
Reference49 articles.
1. Quasi-Medium Energy Ion Scattering Spectroscopy Observation of a Ge δ-doped Layer Fabricated by Hydrogen Mediated Epitaxy
2. Oxygenδ-Doped Si Multi-Layers Grown by Molecular Beam Epitaxy
3. X-ray reflectivity measurement of δ-doped erbium profile in silicon molecular-beam epitaxial layer
4. Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/Si(001) structures using medium-energy ion scattering spectroscopy
5. The phonon-drag thermopower in Si:B and Si:Sb δ-doped samples
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